Internship: AI-assisted Design of Semiconductor Devices

We are seeking a graduate student interested in the research of AI-assisted design of semiconductor devices in general and GaN, SiC and Si IGBT in particular. The interns will collaborate with researchers at MERL and those in Japan to explore and develop new AI input models and methodology, and optimization methods, using both simulated and experimental data for the AI-assisted design of semiconductor devices. The ideal candidates are senior Ph.D. students with experience in semiconductor device physics, device modeling, deep learning, and other machine learning techniques, and the use of TCAD as a simulation tool. Those with deep knowledge of GaN, Si, and SiC devices and applications in RF and power electronics will be great assets. This internship's Start date is flexible and lasts 3-6 months.

Research Areas: Electronic and Photonic Devices, Machine Learning

Contact: Koon Hoo Teo

Mitsubishi Electric Research Labs, Inc. "MERL" provides equal...